| 13PD55-S Description | | The 13PD55-S, an InGaAs photodiode with a 55µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications in telecommunications and data communications systems. | | 13PD55-S Vendor | | Anadigics | | 13PD55-S Features | | Planar Structure Dielectric Passivation 100% Purge Burn-in High Responsivity | | Parameter | Value | | Operating Voltage Max | -30 | | Dark Current nA Typ | 0.05 | | Dark Current nA Max | 2 | | Capacitance pF Typ | 0.3 | | Capacitance pF Max | 0.5 | | Responsivity A/W Min | 0.8 | | Responsivity A/W Typ | 0.9 | | Rise/Fall ns Max | 0.5 | | Frequency Response GHz Typ | 0.4 |
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