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ADG636

ADG636 Manufacturer

Analog Devices

ADG636 Description

1pC Charge Injection, 100pA Leakage CMOS Dual SPDT Switch

ADG636 Categories

SPDT Analog Switches

ADG636 Datasheet (PDF)

ADG636: 1 pC Charge Injection, 100 pA Leakage CMOS ±5 V/+5 V/+3 V Dual SPDT Switch Data Sheet

ADG636 Price & Availability


Check ADG636 Price & Availability at Canics

ADG636 Features

  • 1 pC Charge Injection
  • ±2.7 V to ±5.5 V Dual Supply
  • +2.7 V to +5.5 V Single Supply
  • Automotive Temperature Range:

    ?40°C to +125°C
  • 100 pA (Max @ 25°C) Leakage Currents
  • 85 O Typ On Resistance
  • Rail-to-Rail Operation
  • Fast Switching Times
  • Typical Power Consumption (<0.1 µW)
  • TTL/CMOS Compatible Inputs
  • 14-Lead TSSOP Package

ADG636 Parameters

Bandwidth610MHz
Supply VoltageDual (±5V), Single (+3V), Single (+5V)
Switch TypeSPDT
# Channels2
Ron85Ohms
Id, Is (ON)100pA
Power Dissipation (Max)10µW
Select parameters and click to see components with these parameters.

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