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CY62127BVLL-70BAI

CY62127BVLL-70BAI Manufacturer

Cypress

CY62127BVLL-70BAI Description

Memory : MicroPower SRAMs

CY62127BVLL-70BAI Datasheet (PDF)

CY62127BVLL-70BAI Datasheet

CY62127BVLL-70BAI Price & Availability


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CY62127BVLL-70BAI Features

  • High Speed: 55 ns and 70 ns
  • Wide voltage range: 2.7V?3.6V
  • Low active power
    • 54 mW (max.) (15 mA)
  • Low standby power (70 ns)
    • 54 µW (max.) (15 µA)
  • Easy memory expansion with /CE and /OE features
  • Automatic power-down when deselected
  • CMOS for optimum speed/power
  • Package available in a 44-pin TSOP Type II (forward pinout) and a 48-ball fBGA package

CY62127BVLL-70BAI Description

    The CY62127BV MoBL® is a high-performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery LifeTM (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling, or when deselected (/CE HIGH or both /BLE and /BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (/CE HIGH), outputs are disabled (/OE HIGH), both Byte High Enable and Byte Low Enable are disabled (/BHE, /BLE HIGH), or during a write operation (/CE LOW, and /WE LOW).

    Writing to the device is accomplished by taking Chip Enable (/CE) and Write Enable (/WE) inputs LOW. If Byte Low Enable (/BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (/BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A15).

    Reading from the device is accomplished by taking Chip Enable (/CE) and Output Enable (/OE) LOW while forcing the Write Enable (/WE) HIGH. If Byte Low Enable (/BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (/BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes.

    CY62127BVLL-70BAI Parameters

    Vcc (V)3.0
    Density1MB
    Organization64Kb x16
    100-999 qty $4.20
    Voltage Range2.7 to 3.6
    CommentsPlease quote New Rev, R8 Device CY6212*DV*
    PowerLL
    Select parameters and click to see components with these parameters.

    Products Similar to CY62127BVLL-70BAI

    CY62127BV, CY62127BVLL-55BAI, CY62127BVLL-55ZI, CY62127BVLL-70BKI, CY62127BVLL-70ZI

     
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