CY62136CV30LL-70BVI

CY62136CV30LL-70BVI Manufacturer

CY62136CV30LL-70BVI Description

CY62136CV30LL-70BVI Categories

CY62136CV30LL-70BVI Datasheet (PDF)

CY62136CV30LL-70BVI Price & Availability

CY62136CV30LL-70BVI Features

• Very high speed: 55 ns and 70 ns
• Voltage range:
  • CY62136CV30: 2.7V?3.3V
  • CY62136CV33: 3.0V?3.6V
  • CY62136CV: 2.7V?3.6V
• Pin-compatible with the CY62136V
• Ultra-low active power
  • Typical active current: 1.5 mA @ f = 1 MHz
  • Typical active current: 5.5 mA @ f = f_max (70-ns speed)
• Low standby power
• Easy memory expansion with /CE and /OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered in a 48-ball FBGA

CY62136CV30LL-70BVI Description

The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life? (MoBL^®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (/CE HIGH). The input/output pins (I/O₀ through I/O₁₅) are placed in a high-impedance state when: deselected (/CE HIGH), outputs are disabled (/OE HIGH), both Byte High Enable and Byte Low Enable are disabled (/BHE, /BLE HIGH), or during a write operation (/CE LOW, and /WE LOW).

Writing to the device is accomplished by taking Chip Enable (/CE) and Write Enable (/WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O₀ through I/O₇), is written into the location specified on the address pins (A₀ through A₁₆). If Byte High Enable (/BHE) is LOW, then data from I/O pins (I/O₈ through I/O₁₅) is written into the location specified on the address pins (A₀ through A₁₆).

Reading from the device is accomplished by taking Chip Enable (/CE) and Output Enable (/OE) LOW while forcing the Write Enable (/WE) HIGH. If Byte Low Enable (/BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O₀ to I/O₇. If Byte High Enable (/BHE) is LOW, then data from memory will appear on I/O₈ to I/O₁₅. See the truth table at the back of this data sheet for a complete description of read and write modes.

CY62136CV30LL-70BVI Parameters

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