The CY62158CV25/30/33 are high-performance CMOS static RAMs organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected (/CE1 HIGH or CE2 LOW). Writing to the device is accomplished by taking Chip Enable 1 (/CE1) and Write Enable (/WE) inputs LOW and Chip Enable 2 (CE2) HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A19). Reading from the device is accomplished by taking Chip Enable 1 (/CE1) and Output Enable (/OE) LOW and Chip Enable 2 (CE2) HIGH while forcing Write Enable (/WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (/CE1 LOW and CE2 HIGH), the outputs are disabled (/OE HIGH), or during a write operation (/CE1 LOW and CE2 HIGH and /WE LOW). The CY62158CV25/30/33 are available in a 48-ball FBGA package.
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