The CY62167DV18 is a high-performance CMOS static RAM organized as 1024K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life^TM (MoBL^®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (/CE1) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH.  The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected Chip Enable 1 (/CE1) HIGH or Chip Enable 2 (CE2) LOW, outputs are disabled (/OE HIGH), both Byte High Enable and Byte Low Enable are disabled (/BHE, /BLE HIGH) or during a write operation (Chip Enable 1 (/CE1) LOW and Chip Enable 2 (CE2) HIGH and /WE LOW).Writing to the device is accomplished by taking Chip Enable 1 (/CE1) LOW and Chip Enable 2 (CE2) HIGH and Write Enable (/WE) input LOW.  If Byte Low Enable (/BLE) is LOW, then das pins (A0 through A19). If Byte High Enable (/BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the ad.Reading from the device is accomplished by taking Chip Enable 1 (/CE1) LOW and Chip Enable 2 (CE2) HIGH and Output Enable (/OE) LOW while forcing the Write Enable (/WE) HIGH.  If Byte Low Enable (<>O7. If Byte High Enable (/BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes.