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CY62167DV30LL-70BVI Datasheet

CY62167DV30LL-70BVI ManufacturerCypress
CY62167DV30LL-70BVI Description16-Mbit (1M x 16) Static RAM
CY62167DV30LL-70BVI DescriptionIC SRAM 16MBIT 70NS 48FBGA
CY62167DV30LL-70BVI Datasheet (PDF)
CY62167DV30LL-70BVI Datasheet
CY62167DV30
CY62167DV30LL-70BVI Features
  • Very high speed: 55 ns
  • Wide voltage range: 2.20V ? 3.60V
  • Ultra-low active power
    • Typical active current: 2 mA @ f = 1 MHz
    • Typical active current: 15 mA @ f = fmax
  • Ultra-low standby power
  • Easy memory expansion with /CE1, CE2, and /OE features
  • Automatic power-down when deselected
  • CMOS for optimum speed/power
  • Packages offered in a 48-ball BGA and 48-pin TSOPI
CY62167DV30LL-70BVI Description

    The CY62167DV30 is a high-performance CMOS static RAM organized as 1M words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

    This is ideal for providing More Battery Life. (MoBL.) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (/CE1 HIGH or CE2 LOW or both /BHE and /BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (/CE1HIGH or CE2 LOW), outputs are disabled (/OE HIGH), both Byte High Enable and Byte Low Enable are disabled (/BHE, /BLE HIGH), or during a Write operation (/CE1 LOW, CE2 HIGH and /WE LOW).

    Writing to the device is accomplished by taking Chip Enables

    (/CE1 LOW and CE2 HIGH) and Write Enable (/WE) input LOW.

    If Byte Low Enable (/BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (/BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).

     

     

    CY62167DV30LL-70BVI Parameters
    Vcc (V)3.0
    InterfaceParallel
    Density16Mb
    Organization1024Kb x16
    100-999 qty $14.00
    Voltage Range2.2 to 3.6
    CommentsFull production
    CategoryIntegrated Circuits (ICs)
    Memory TypeSRAM
    PowerL, LL
    Memory Size16M (2M x 8 or 1M x 16)
    Speed70ns
    FamilyMemory
    Operating Temperature-40°C ~ 85°C
    Package / Case48-FBGA
    Voltage - Supply2.2 V ~ 3.6 V
    Format - MemoryRAM
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