CY7C1019B-15VI
CY7C1019B-15VI Description
128K x 8 Static RAM
CY7C1019B-15VI Vendor
Cypress
CY7C1019B-15VI Features
  • High speed
    • tAA = 10, 12, 15 ns
  • CMOS for optimum speed/power
  • Center power/ground pinout
  • Automatic power-down when deselected
  • Easy memory expansion with /CE  and /OE options
  • Functionally equivalent to CY7C1019
CY7C1019B-15VI Description

    The CY7C1019B/10191B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (/CE), an active LOW Output Enable (/OE), and three-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected.

    Writing to the device is accomplished by taking Chip Enable (/CE) and Write Enable (/WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).

    Reading from the device is accomplished by taking Chip Enable (/CE) and Output Enable (/OE) LOW while forcing Write Enable (/WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

    The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (/CE HIGH), the outputs are disabled (/OE HIGH), or during a write operation (/CE LOW, and /WE LOW).

    The CY7C1019B/10191B is available in standard 32-pin TSOP Type II and 400-mil-wide SOJ packages. Customers should use part number CY7C10191B when ordering parts with 10 ns tAA, and CY7C1019B when ordering 12 and 15 ns tAA.

CY7C1019B-15VI Datasheet and Application Notes
ParameterValue
100-999 qty $3.70
Density 1Mb
Organization 128Kb x8
Vcc (V) 5
Products related to CY7C1019B-15VI
CY7C10191B   CY7C1019B-12VC   CY7C1019B   CY7C1019B-15VC   
CY7C1019B-12ZC   CY7C10191B-10ZC   CY7C10191B-10VC   

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