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CY7C1019CV33-10ZI

CY7C1019CV33-10ZI Manufacturer

CY7C1019CV33-10ZI Description

CY7C1019CV33-10ZI Datasheet (PDF)

CY7C1019CV33-10ZI Datasheet

CY7C1019CV33-10ZI Price & Availability


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CY7C1019CV33-10ZI Features

  • Pin and function compatible with CY7C1019BV33
  • High speed
    • tAA = 8, 10, 12, 15 ns
  • CMOS for optimum speed/power
  • Data Retention at 2.0V
  • Center power/ground pinout
  • Automatic power-down when deselected
  • Easy memory expansion with /CE  and /OE options
  • Available in 32-pin TSOP II and 400-mil SOJ package

CY7C1019CV33-10ZI Description

    The CY7C1019CV33 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (/CE), an active LOW Output Enable (/OE), and three-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected.

    Writing to the device is accomplished by taking Chip Enable (/CE) and Write Enable (/WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).

    Reading from the device is accomplished by taking Chip Enable (/CE) and Output Enable (/OE) LOW while forcing Write Enable (/WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

    The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (/CE HIGH), the outputs are disabled (/OE HIGH), or during a write operation (/CE LOW, and /WE LOW).

    The CY7C1019CV33 is available in a standard 32-pin TSOP II and 400-mil-wide SOJ.

    CY7C1019CV33-10ZI Parameters

    Vcc (V)3.3
    Density1MB
    Organization128Kb x8
    Select parameters and click to see components with these parameters.

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