CY7C1046CV33-15VI Datasheet

• High speed
• t_AA = 10 ns
• Low active power for 10-ns speed
• 324 mW (max.)
• 2.0V data retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with /CE and /OE features

The CY7C1046CV33 is a high-performance CMOS static RAM organized as 1,048,576 words by four bits. Easy memory expansion is provided by an active LOW Chip Enable (/CE), an active LOW Output Enable (/OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (/CE) and Write Enable (/WE) inputs LOW. Data on the four I/O pins (I/O₀ through I/O₃) is then written into the location specified on the address pins (A₀ through A₁₉).

Reading from the device is accomplished by taking Chip Enable (/CE) and Output Enable (/OE) LOW while forcing Write Enable (/WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.

The four input/output pins (I/O₀ through I/O₃) are placed in a high-impedance state when the device is deselected (/CE HIGH), the outputs are disabled (/OE HIGH), or during a Write operation (/CE LOW, and /WE LOW).

The CY7C1046CV33 is available in a standard 400-mil-wide 32-pin SOJ package with center power and ground (revolutionary) pinout.