CY7C1231F | ||||||||
CY7C1231F DescriptionCY7C1231F CategoriesCY7C1231F ManufacturerCY7C1231F Datasheet (PDF)CY7C1231F Price & AvailabilityCY7C1231F Features
CY7C1231F DescriptionThe CY7C1231F is a 3.3V, 128K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1231F is equipped with the advanced No Bus Latency? (NoBL?) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (/CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 7.5 ns (117-MHz device). Write operations are controlled by the two Byte Write Select (/BW[A:B]) and a Write Enable (/WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (/CE1, CE2, /CE3) and an asynchronous Output Enable (/OE) provide for easy bank selection and output three-state control. In order to avoid bus contention, the output drivers are synchronously three-stated during the data portion of a write sequence. Products Similar to CY7C1231FOther Components 13200-T25 ACB62DHBS RT1206DRD07698RL MCP6241RT-E/OT 0402ZC333KAT2A Keywords
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