| CY7C1345F-100BGC Description | The CY7C1345F is a 131,072 x 36 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (/CE1), depth-expansion Chip Enables (CE2 and /CE3), Burst Control inputs (/ADSC, /ADSP, and /ADV), Write Enables (/BW[A:D], and /BWE), and Global Write (/GW). Asynchronous inputs include the Output Enable (/OE) and the ZZ pin. The CY7C1345F allows either interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses can be initiated with the Processor Address Strobe (/ADSP) or the cache Controller Address Strobe (/ADSC) inputs. Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (/ADSP) or Address Strobe Controller (/ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (/ADV). The CY7C1345F operates from a +3.3V core power supply while all outputs may operate with either a +2.5 or +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible. |