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CY7C1355B-100BZC Datasheet

CY7C1355B-100BZC ManufacturerCypress
CY7C1355B-100BZC Description9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture
CY7C1355B-100BZC Datasheet (PDF)
CY7C1355B-100BZC Datasheet
CY7C1355B-100BZC Features
  • No Bus Latency? (NoBL?) architecture eliminates dead cycles between write and read cycles
  • Can support up to 133-MHz bus operations with zero wait states
  • ? Data is transferred on every clock
  • Pin compatible and functionally equivalent to ZBT? devices
  • Internally self-timed output buffer control to eliminate the need to use /OE
  • Registered inputs for flow-through operation
  • Byte Write capability
  • 3.3V/2.5V I/O power supply
  • Fast clock-to-output times
    • 6.5 ns (for 133-MHz device)
    • 7.0 ns (for 117-MHz device)
    • 7.5 ns (for 100-MHz device)
  • Clock Enable (/CEN) pin to enable clock and suspend operation
  • Synchronous self-timed writes
  • Asynchronous Output Enable
  • Offered in JEDEC-standard 100 TQFP, 119-Ball BGA and 165-Ball fBGA packages
  • Three chip enables for simple depth expansion
  • Automatic Power-down feature available using ZZ mode or CE deselect
  • JTAG boundary scan for BGA and fBGA packages
  • Burst Capability?linear or interleaved burst order
  • Low standby power
CY7C1355B-100BZC Description

    The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355B/CY7C1357B is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions.

    All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (/CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 6.5 ns (133-MHz device).

    Write operations are controlled by the two or four Byte Write Select (/BWX) and a Write Enable (/WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (/CE1, CE2, /CE3) and an asynchronous Output Enable (/OE) provide for easy bank selection and output three-state control. In order to avoid bus contention, the output drivers are synchronously three-stated during the data portion of a write sequence.

    CY7C1355B-100BZC Parameters
    Vcc (V)3.3
    ArchitectureFlow-through
    Density9Mb
    Organization256Kb x36
    CommentsProduction
    Vccq (V)3.3
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