CY7C1357B-133AC

CY7C1357B-133AC Manufacturer

CY7C1357B-133AC Description

CY7C1357B-133AC Datasheet (PDF)

CY7C1357B-133AC Price & Availability

CY7C1357B-133AC Features

• No Bus Latency? (NoBL?) architecture eliminates dead cycles between write and read cycles
• Can support up to 133-MHz bus operations with zero wait states
• ? Data is transferred on every clock
• Pin compatible and functionally equivalent to ZBT? devices
• Internally self-timed output buffer control to eliminate the need to use /OE
• Registered inputs for flow-through operation
• Byte Write capability
• 3.3V/2.5V I/O power supply
• Fast clock-to-output times
  • 6.5 ns (for 133-MHz device)
  • 7.0 ns (for 117-MHz device)
  • 7.5 ns (for 100-MHz device)
• Clock Enable (/CEN) pin to enable clock and suspend operation
• Synchronous self-timed writes
• Asynchronous Output Enable
• Offered in JEDEC-standard 100 TQFP, 119-Ball BGA and 165-Ball fBGA packages
• Three chip enables for simple depth expansion
• Automatic Power-down feature available using ZZ mode or CE deselect
• JTAG boundary scan for BGA and fBGA packages
• Burst Capability?linear or interleaved burst order
• Low standby power

CY7C1357B-133AC Description

The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355B/CY7C1357B is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions.

All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (/CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 6.5 ns (133-MHz device).

Write operations are controlled by the two or four Byte Write Select (/BWX) and a Write Enable (/WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (/CE1, CE2, /CE3) and an asynchronous Output Enable (/OE) provide for easy bank selection and output three-state control. In order to avoid bus contention, the output drivers are synchronously three-stated during the data portion of a write sequence.

CY7C1357B-133AC Parameters

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