CY7C1464V25-250BGC

CY7C1464V25-250BGC Manufacturer

CY7C1464V25-250BGC Description

CY7C1464V25-250BGC Price & Availability

CY7C1464V25-250BGC Features

• Zero Bus Latency^TM, no dead cycles between write and read cycles
• Fast clock speed: 250, 200, and 167 MHz
• Fast access time: 2.7, 3.0 and 3.5 ns
• Internally synchronized registered outputs eliminate the need to control OE
• Single 2.5V ±5% power supply V_DD
• _{Separate VDDQ} for 2.5V or 1.8V I/O
• Single WE (Read/Write) control pin
• Positive clock-edge triggered, address, data, and control signal registers for fully pipelined applications
• Interleaved or linear four-word burst capability
• Individual byte write (BWS_a?BWS_h) control (may be tied LOW)
• CEN pin to enable clock and suspend operations
• Three chip enables for simple depth expansion
• JTAG boundary scan for BGA packaging version
• Available in 119-ball bump BGA, 165-ball FBGA package and 100-pin TQFP packages (CY7C1460V25 and CY7C1462V25). 209 FBGA package for CY7C1464V25

CY7C1464V25-250BGC Description

The CY7C1460V25,CY7C1462V25 and CY7C1464V25 SRAMs are designed to eliminate dead cycles when transitions from READ to WRITE or vice versa. These SRAMs are optimized for 100 percent bus utilization and achieves Zero Bus Latency. They integrate 1,048,576 x 36/2,097,152 x 18/ 524,288 x 72 SRAM cells, respectively, with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. The Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced single layer polysilicon, three-layer metal technology. Each memory cell consists of six transistors.

All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, depth-expansion Chip Enables (/CE₁, CE₂, and /CE₃), cycle start input (ADV//LD), Clock Enable (/CEN), Byte Write Selects (/BWS_a, /BWS_b, /BWS_c, /BWS_d, /BWS_e, /BWS_f, /BWS_g, /BWS_h), and read-write control (/WE). /BWS_c and /BWS_d apply to CY7C1460V25 and CY7C1464V25 only. /BWS_e, /BWS_f, /BWS_g, and /BWS_h apply to CY7C1464V25 only.

Address and control signals are applied to the SRAM during one clock cycle, and two cycles later, its associated data occurs, either read or write.

A Clock Enable (/CEN) pin allows operation of the CY7C1460V25,CY7C1462V25 and CY7C1464V25 to be suspended as long as necessary. All synchronous inputs are ignored when (CEN) is high and the internal device registers will hold their previous values.

There are three Chip Enable (/CE₁, CE₂, /CE₃) pins that allow the user to deselect the device when desired. If any one of these three are not active when ADV//LD is low, no new memory operation can be initiated and any burst cycle in progress is stopped. However, any pending data transfers (rea

CY7C1464V25-250BGC Parameters