CY7C1474V25

CY7C1474V25 Manufacturer

CY7C1474V25 Description

CY7C1474V25 Categories

CY7C1474V25 Datasheet (PDF)

CY7C1474V25 Price & Availability

CY7C1474V25 Features

• Pin-compatible and functionally equivalent to ZBT?
• Supports 250-MHz bus operations with zero wait states
  • Available speed grades are 250, 200 and 166MHz
• Internally self-timed output buffer control to eliminate the need to use asynchronous /OE
• Fully registered (inputs and outputs) for pipelined operation
• Byte Write capability
• Single 2.5V power supply
• 2.5V/1.8V I/O operation
• Fast clock-to-output times
  • 2.6 ns (for 250-MHz device)
  • 3.0 ns (for 200-MHz device)
  • 3.4 ns (for 166-MHz device)
• Clock Enable (/CEN) pin to suspend operation
• Synchronous self-timed writes
• CY7C1470V25 and CY7C1472V25 available in 100 TQFP, 119 BGA, and 165 fBGA packages; CY7C1474V25 available in 209-Ball fBGA package
• Compatible with IEEE 1149.1 JTAG Boundary Scan
• Burst capability?linear or interleaved burst order
• ?ZZ? Sleep Mode option and Stop Clock option

CY7C1474V25 Description

The CY7C1470V25/CY7C1472V25/CY7C1474V25 are 2.5V, 2M x 36/4M x 18/1M x 72 Synchronous pipelined burst SRAMs with No Bus Latency? (NoBL?) logic, respectively. They are designed to support unlimited true back-to-back Read/Write operations with no wait states. The CY7C1470V25/CY7C1472V25/CY7C1474V25 are equipped with the advanced (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data in systems that require frequent Write/Read transitions. The CY7C1470V25/CY7C1472V25/CY7C1474V25 are pin-compatible and functionally equivalent to ZBT devices.

All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (/CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Write operations are controlled by the Byte Write Selects (/BWa?/BWh for CY7C1474V25, /BWa?/BWd for CY7C1470V25 and /BWa?/BWb for CY7C1472V25) and a Write Enable (/WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Enables (/CE1, CE2, /CE3) and an asynchronous Output Enable (/OE) provide for easy bank selection and output three-state control. In order to avoid bus contention, the output drivers are synchronously three-stated during the data portion of a write sequence.

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