CY7C1483V33
CY7C1483V33 Description
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1483V33 Vendor
Cypress
CY7C1483V33 Categories
CY7C1483V33 Features
  • Supports 133-MHz bus operations
  • 2M x 36/4M x 18/1M x 72 common I/O
  • Fast clock-to-output times
  • 5.5 ns (for 150-MHz device)
  • 6.5 ns (for 133-MHz device)
  • 7.5 ns (for 117-MHz device)
  • 8.5 ns (for 100-MHz device)
  • Single 3.3V –5% and +5% power supply VDD
  • Separate VDDQ for 3.3V or 2.5V
  • Byte Write
  • Enable and Global Write control
  • Burst Capability linear or interleaved burst order
  • Automatic power-down available using ZZ mode or /CE deselect
  • JTAG boundary scan for BGA packaging version
  • Available in 119-ball bump BGA and 100-pin TQFP packages (CY7C1481V33 and CY7C1483V33). 209 BGA package for CY7C1487V33
  • 165-ball FBGA and 209-ball BGA will only be offered on an opportunity basis (check with Cypress sales and marketing)
CY7C1483V33 Description

     

    The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors.

    The CY7C1481V33/CY7C1483V33/CY7C1487V33 SRAMs integrate 2,097,152 x 36 / 4,194,304 x18 and 1,048,576x 72 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (/CE), Burst Control Inputs (/ADSC, /ADSP, and /ADV), Write Enables (/BWa, /BWb, /BWc, /BWd, /BWe, /BWf, /BWg, /BWh, and /BWE), and Global Write (/GW).

    Asynchronous inputs include the Output Enable (/OE) and Burst Mode Control (MODE). The data outputs (Q), enabled by OE, are also asynchronous.

    Addresses and chip enables are registered with either Address Status Processor (/ADSP) or address status controller (/ADSC) input pins. Subsequent burst addresses can be internally generated as controlled by the Burst Advance Pin (/ADV).

    Address, data inputs, and write controls are registered on-chip to initiate self-timed WRITE cycle. WRITE cycles can be one to four bytes wide as controlled by the write control inputs. Individual byte write allows individual byte to be written. /BWa controls DQa and DPa. /BWb controls DQb and DPb. /BWc controls DQc and DPc. /BWd controls DQd and DPd. /BWe controls DQe and DPe. /BWf controls DQf and DPf. /BWg controls DQg and DPg. /BWh controls DQh and DPh. /BWa, /BWb, /BWc, /BWd, /BWe, /BWf, /BWg, and /BWh can be active only with /BWE LOW. GW being LOW causes all bytes to be written. WRITE pass-through capability allows written data available at the output for the immediately next READ cycle. This device also incorporates pipelined enable circuit for easy depth expansion without penalizing system performance.

    Inputs and outputs of the CY7C1481V33/CY7C1483V33/ CY7C1487V33 are JEDEC-standard JESD8-5-compatible.

CY7C1483V33 Datasheet and Application Notes
Products related to CY7C1483V33
CY7C1483V33-133AXC   CY7C1487V33   

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