CY7C1485V33 Datasheet

• Fast clock speed: 250, 200, and 167 MHz
• Provide high-performance 3-1-1-1 access rate
• Fast access time: 2.6, 3.0, and 3.4 ns
• Optimal for depth expansion
• Single 3.3V ?5% and +5% power supply V_DD
• Separate V_DDQ for 3.3V or 2.5V
• Common data inputs and data outputs
• Byte Write Enable and Global Write control
• Chip enable for address pipeline
• Address, data, and control registers
• Internally self-timed Write Cycle
• Burst control pins (interleaved or linear burst sequence)
• Automatic power-down for portable applications
• High-density, high-speed packages
• JTAG boundary scan for BGA packaging version
• Available in 119-ball bump BGA and 100-pin TQFP packages (CY7C1484V33 and CY7C1485V33).
• 165-ball FBGA will be offered on an opportunity basis (Please contact Cypress sales or marketing)  

The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors.

The CY7C1484V33 and CY7C1485V33 SRAMs integrate 2,097,152 × 36/4,194,304 × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (/CE), burst control inputs (/ADSC, /ADSP, and /ADV), write enables (/BW_a, /BW_b, /BW_c, /BW_d, and /BWE), and Global Write (/GW).

Asynchronous inputs include the Output Enable (/OE) and burst mode control (MODE). The data (DQx) and the data parity (DPx) outputs, enabled by /OE, are also asynchronous.

DQa,b,c,d and DPa,b,c,d apply to CY7C1484V33 and DQa,b and DPa,b apply to CY7C1485V33. a, b, c, and d each are eight bits wide in the case of DQ and one bit wide in the case of DP.

Addresses and chip enables are registered with either Address Status Processor (/ADSP) or Address Status Controller (/ADSC) input pins. Subsequent burst addresses can be internally generated as controlled by the Burst Advance Pin (/ADV).

Address, data inputs, and write controls are registered on-chip to initiate self-timed Write cycle. Write cycles can be one to four bytes wide as controlled by the write control inputs. Individual byte write allows individual byte to be written. /BW_a controls DQa and DPa. /BW_b controls DQb and DPb. /BW_c controls DQc and DPd. /BW_d controls DQ and DPd. /BW_a, /BW_b, /BW_c, /BW_d can be active only with /BWE being LOW. /GW being LOW causes all bytes to be written. Write pass-through capability allows written data available at the output for the immediately n