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2N6517BU

2N6517BU Description

NPN Epitaxial Silicon Transistor

2N6517BU Description

TRANSISTOR NPN 350V 500MA TO-92

2N6517BU Description

BIPOLAR TRANSISTOR, NPN, 350V TO-92

2N6517BU Categories

Transistors

2N6517BU Manufacturer

Fairchild Semiconductor

2N6517BU Datasheet (PDF)

2N6517BU Datasheet
2N6517BU Datasheet

2N6517BU Price & Availability


Check 2N6517BU Price & Availability at Canics

2N6517BU Features

  • Collector-Emitter Voltage VCEO=350V
  • Collector Dissipation: PC(max)=625mW
  • Complement to 2N6520
  • Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base)

2N6517BU Parameters

Product statusFull production
Package typeTO-92
Leads3
Packing methodBULK
Pricing*$0.0488
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
Mounting TypeThrough Hole
Package / CaseTO-92-3 (Standard Body), TO-226
Power - Max625mW
Transistor TypeNPN
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)350V
Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA, 10V
Frequency - Transition200MHz
No. of Pins3
Transistor PolarityNPN
DC Collector Current500mA
Collector Emitter Voltage V(br)ceo350V
Power Dissipation Pd625mW
Transition Frequency Typ ft200MHz
RoHS CompliantYes
DC Current Gain hFE30
Select parameters and click to see components with these parameters.

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2N6517, 2N6517CBU, 2N6517CTA, 2N6517TA

 
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Keywords
2N6517BU Data Sheet 2N6517BU Spec 2N6517BU Application Notes 2N6517BU Distributor
2N6517BU Circuit 2N6517BU Reference 2N6517BU PDF 2N6517BU RoHS