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2N7000_D26Z

2N7000_D26Z Description

2N7000_D26Z Description

2N7000_D26Z Description

2N7000_D26Z Categories

2N7000_D26Z Manufacturer

2N7000_D26Z Datasheet (PDF)

2N7000_D26Z Datasheet
2N7000/02, NDS7002A

2N7000_D26Z Price & Availability


Check 2N7000_D26Z Price & Availability at Canics

2N7000_D26Z Features

  • High density cell design for extremely low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and Relaible.
  • High saturation current capability.

2N7000_D26Z Description

    These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

    2N7000_D26Z Parameters

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    Keywords
    2N7000_D26Z Data Sheet 2N7000_D26Z Spec 2N7000_D26Z Application Notes 2N7000_D26Z Distributor
    2N7000_D26Z Circuit 2N7000_D26Z Reference 2N7000_D26Z PDF 2N7000_D26Z RoHS