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4N383S

4N383S Description

6-pin DIP High Voltage Phototransistor Output Optocoupler

4N383S Description

OPTOCOUPLER TRANS-OUT VDE 6-SMD

4N383S Categories

Optocouplers

4N383S Manufacturer

Fairchild Semiconductor

4N383S Datasheet (PDF)

4N383S Datasheet
H11D1-D4, 4N38

4N383S Price & Availability


Check 4N383S Price & Availability at Canics

4N383S Features

  • High voltage
    • H11D1, H11D2, BVCER = 300V
    • H11D3, H11D4, BVCER = 200V
  • High isolation voltage
    • 5300 VAC RMS - 1 minute
    • 7500 VAC PEAK - 1 minute
  • Underwriters Laboratory (UL) recognized - File #E90700

4N383S Description

    The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

    4N383S Parameters

    Product statusFull production
    Package typeDIP
    Leads6
    Packing methodBULK
    Pricing*$0.281
    Input TypeDC
    Output TypeTransistor with Base
    Number of Channels1
    CategoryIsolators
    FamilyOptoisolators - Transistor, Photovoltaic Output
    Mounting TypeSurface Mount
    Package / Case6-SMD
    Voltage - Output80V
    Current - DC Forward (If)80mA
    Current - Output / Channel100mA
    Voltage - Isolation5300Vrms
    Current Transfer Ratio (Min)20% @ 2mA
    Vce Saturation (Max)1V
    Select parameters and click to see components with these parameters.

    Products Similar to 4N383S

    4N38, 4N38300, 4N38300W, 4N383SD, 4N38S

     
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    Keywords
    4N383S Data Sheet 4N383S Spec 4N383S Application Notes 4N383S Distributor
    4N383S Circuit 4N383S Reference 4N383S PDF 4N383S RoHS