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4N383SD

4N383SD Description

4N383SD Description

4N383SD Categories

4N383SD Manufacturer

4N383SD Datasheet (PDF)

4N383SD Datasheet
H11D1-D4, 4N38

4N383SD Price & Availability


Check 4N383SD Price & Availability at Canics

4N383SD Features

  • High voltage
    • H11D1, H11D2, BVCER = 300V
    • H11D3, H11D4, BVCER = 200V
  • High isolation voltage
    • 5300 VAC RMS - 1 minute
    • 7500 VAC PEAK - 1 minute
  • Underwriters Laboratory (UL) recognized - File #E90700

4N383SD Description

    The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

    4N383SD Parameters

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    Keywords
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    4N383SD Circuit 4N383SD Reference 4N383SD PDF 4N383SD RoHS