74VHCT00ASJ Description74VHCT00ASJ Description74VHCT00ASJ Categories74VHCT00ASJ Manufacturer
74VHCT00ASJ Datasheet (PDF)
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74VHCT00ASJ Features- High speed: tPD = 5.0 ns (typ) at TA = 25°C
- High noise immunity: VIH = 2.0V, VIL = 0.8V
- Power down protection is provided on all inputs and outputs
- Low noise: VOLP = 0.8V (max)
- Low power dissipation: ICC = 2 µA (max) at TA = 25°C
- Pin and function compatible with 74HCT00
74VHCT00ASJ DescriptionThe VHCT00A is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages, including buffer output, which provide high noise immunity and stable output. 74VHCT00ASJ Parameters
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