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FDP6030BL

FDP6030BL Description

N-Channel Logic Level PowerTrench MOSFET

FDP6030BL Description

MOSFET N-CH 30V 40A TO-220

FDP6030BL Categories

Transistors
N-Channel MOSFET Transistors

FDP6030BL Manufacturer

Fairchild Semiconductor

FDP6030BL Datasheet (PDF)

FDP6030BL Datasheet

FDP6030BL Price & Availability


Check FDP6030BL Price & Availability at Canics

FDP6030BL Features

  • 40 A, 30 V.
    • RDS(ON) = 0.018 W @ VGS = 10 V
    • RDS(ON) = 0.024 W @ VGS = 4.5 V.
  • Critical DC electrical parameters specified at evevated temperature.
  • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
  • High performance trend technology for extremely low RDS(ON).
  • 175°C maximum junction temperature rating.

FDP6030BL Description

    This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

    FDP6030BL Parameters

    Product statusFull production
    Package typeTO-220
    Leads3
    Packing methodRAIL
    Pricing*$0.73
    CategoryDiscrete Semiconductor Products
    FamilyMOSFETs, GaNFETs - Single
    FET TypeMOSFET N-Channel, Metal Oxide
    SeriesPowerTrench®
    Mounting TypeThrough Hole
    Package / CaseTO-220-3 (Straight Leads)
    Power - Max60W
    FET FeatureLogic Level Gate
    Rds On (Max) @ Id, Vgs18 mOhm @ 20A, 10V
    Drain to Source Voltage (Vdss)30V
    Vgs(th) (Max) @ Id3V @ 250µA
    Current - Continuous Drain (Id) @ 25° C40A
    Input Capacitance (Ciss) @ Vds 1160pF @ 15V
    Gate Charge (Qg) @ Vgs17nC @ 5V
    Select parameters and click to see components with these parameters.

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    Keywords
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