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FDS6812A

FDS6812A Description

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

FDS6812A Description

MOSFET N-CH DUAL 20V 6.7A 8SOIC

FDS6812A Categories

Transistors
PWM ICs

FDS6812A Manufacturer

Fairchild Semiconductor

FDS6812A Datasheet (PDF)

FDS6812A Datasheet

FDS6812A Price & Availability


Check FDS6812A Price & Availability at Canics

FDS6812A Features

  • 6.7 A, 20 V
  • RDS(ON) = 22 mW @ VGS = 4.5 V
  • RDS(ON) = 35 mW @ VGS = 2.5 V
  • Low gate charge (12 nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

FDS6812A Description

    These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

    FDS6812A Parameters

    Product statusFull production
    Package typeSO-8
    Leads8
    Packing methodTAPE REEL
    Pricing*$0.96
    CategoryDiscrete Semiconductor Products
    FamilyMOSFETs - Arrays
    FET Type2 N-Channel (Dual)
    SeriesPowerTrench®
    Mounting TypeSurface Mount
    Package / Case8-SOIC (3.9mm Width)
    Power - Max900mW
    FET FeatureLogic Level Gate
    Rds On (Max) @ Id, Vgs22 mOhm @ 6.7A, 4.5V
    Drain to Source Voltage (Vdss)20V
    Vgs(th) (Max) @ Id1.5V @ 250µA
    Current - Continuous Drain (Id) @ 25° C6.7A
    Input Capacitance (Ciss) @ Vds 1082pF @ 10V
    Gate Charge (Qg) @ Vgs19nC @ 4.5V
    Select parameters and click to see components with these parameters.

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    Keywords
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