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FDS6892A

FDS6892A Description

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

FDS6892A Description

MOSFET N-CH DUAL 20V 7.5A 8SOIC

FDS6892A Description

DUAL N CHANNEL MOSFET, 20V, SOIC

FDS6892A Categories

Transistors
PWM ICs

FDS6892A Manufacturer

Fairchild Semiconductor

FDS6892A Datasheet (PDF)

FDS6892A Datasheet

FDS6892A Price & Availability


Check FDS6892A Price & Availability at Canics

FDS6892A Features

  • 7.5 A, 20 V
  • RDS(ON) = 18 mW @ VGS = 4.5 V
  • RDS(ON) = 24 mW @ VGS = 2.5 V
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

FDS6892A Description

    These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

    FDS6892A Parameters

    Product statusFull production
    Package typeSO-8
    Leads8
    Packing methodTAPE REEL
    Pricing*$0.89
    CategoryDiscrete Semiconductor Products
    FamilyMOSFETs - Arrays
    FET Type2 N-Channel (Dual)
    SeriesPowerTrench®
    Mounting TypeSurface Mount
    Package / Case8-SOIC (3.9mm Width)
    Power - Max900mW
    FET FeatureLogic Level Gate
    Rds On (Max) @ Id, Vgs18 mOhm @ 7.5A, 4.5V
    Drain to Source Voltage (Vdss)20V
    Vgs(th) (Max) @ Id1.5V @ 250µA
    Current - Continuous Drain (Id) @ 25° C7.5A
    Input Capacitance (Ciss) @ Vds 1333pF @ 10V
    Gate Charge (Qg) @ Vgs17nC @ 4.5V
    Transistor PolarityN Channel
    Continuous Drain Current Id7.5A
    Drain Source Voltage Vds20V
    On Resistance Rds(on)18mohm
    RoHS CompliantYes
    Rds(on) Test Voltage Vgs4.5V
    Threshold Voltage Vgs Typ900mV
    Select parameters and click to see components with these parameters.

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    Keywords
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    FDS6892A Circuit FDS6892A Reference FDS6892A PDF FDS6892A RoHS