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FQD20N06LE

FQD20N06LE Description

60V N-Channel Logic level QFET (Built in ESD Protection Diode)

FQD20N06LE Categories

ESD Protection
Diodes

FQD20N06LE Manufacturer

Fairchild Semiconductor

FQD20N06LE Datasheet (PDF)

FQD20N06LE Datasheet

FQD20N06LE Price & Availability


Check FQD20N06LE Price & Availability at Canics

FQD20N06LE Features

  • 17.2A, 60V, R DS(on) = 0.06W @V GS = 10 V
  • Low gate charge ( typical 9.5 nC)
  • Low Crss ( typical 35 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 150ºC maximum junction temperature rating
  • Low level gate drive requirements allowing direct operation form logic drivers
  • Built-in ESD Protection Diode

FQD20N06LE Description

    These N-Channel enhancement mode power field effect transistors are produced using Fairchild"s proprietary, planar stripe, DMOS technology.

    This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

    FQD20N06LE Parameters

    Product statusFull production
    Package typeTO-252(DPAK)
    Leads2
    Packing methodTAPE REEL
    Pricing*$0.59
    Select parameters and click to see components with these parameters.

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    Keywords
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