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FQD20N06LETM

FQD20N06LETM Description

FQD20N06LETM Description

FQD20N06LETM Categories

FQD20N06LETM Manufacturer

FQD20N06LETM Datasheet (PDF)

FQD20N06LETM Price & Availability


Check FQD20N06LETM Price & Availability at Canics

FQD20N06LETM Features

  • 17.2A, 60V, R DS(on) = 0.06W @V GS = 10 V
  • Low gate charge ( typical 9.5 nC)
  • Low Crss ( typical 35 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 150ºC maximum junction temperature rating
  • Low level gate drive requirements allowing direct operation form logic drivers
  • Built-in ESD Protection Diode

FQD20N06LETM Description

    These N-Channel enhancement mode power field effect transistors are produced using Fairchild"s proprietary, planar stripe, DMOS technology.

    This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

    FQD20N06LETM Parameters

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    Keywords
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    FQD20N06LETM Circuit FQD20N06LETM Reference FQD20N06LETM PDF FQD20N06LETM RoHS