H11D13S Datasheet - 6-pin DIP High Voltage Phototransistor Output Optocoupler

H11D13S Description
6-pin DIP High Voltage Phototransistor Output Optocoupler
H11D13S Vendor
Fairchild Semiconductor
H11D13S Features
High voltage H11D1, H11D2, BV_CER = 300V H11D3, H11D4, BV_CER = 200V High isolation voltage 5300 VAC RMS - 1 minute 7500 VAC PEAK - 1 minute Underwriters Laboratory (UL) recognized - File #E90700
H11D13S Description
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
H11D13S Datasheet and Application Notes
H11D13S Datasheet
Parameter	Value
Product status	Full Production
Pricing*	$0.299
Package type	DIP
Leads	6
Packing method	BULK
Product status	Full Production
Pricing*	$0.299
Package type	DIP
Leads	6
Packing method	BULK
Product status	Full Production
Pricing*	$0.299
Package type	DIP
Leads	6
Packing method	BULK
Products related to H11D13S
H11D13SD H11D1 H11D33S 4N38W 4N38300 H11D43SD H11D1W H11D3W H11D4S H11D23SD H11D4SD H11D3300W 4N383SD H11D23S H11D3 H11D2300W H11D1S H11D43S H11D4W H11D33SD H11D2S 4N38300W H11D1SD 4N38S 4N383S H11D4 H11D1300 4N38SD H11D3300 H11D1300W H11D4300 H11D3SD H11D2300 H11D4300W H11D2 H11D2SD H11D3S 4N38 H11D2W

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