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ISL9N302AP3

ISL9N302AP3 Description

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ISL9N302AP3 Description

MOSFET N-CH 30V 75A TO-220AB

ISL9N302AP3 Categories

Transistors
N-Channel MOSFET Transistors
PWM ICs

ISL9N302AP3 Manufacturer

Fairchild Semiconductor

ISL9N302AP3 Datasheet (PDF)

ISL9N302AP3 Datasheet

ISL9N302AP3 Price & Availability


Check ISL9N302AP3 Price & Availability at Canics

ISL9N302AP3 Features

  • Fast switching speed
  • rDS(ON) = 0.0019W (Typ), VGS = 10V
  • rDS(ON) = 0.0027W (Typ), VGS = 4.5V
  • Qg (Typ) = 110nC, VGS = 5V
  • Qgd (Typ) = 31nC
  • CISS (Typ) = 11000pF

ISL9N302AP3 Description

    This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

    ISL9N302AP3 Parameters

    Product statusFull production
    Package typeTO-220
    Leads3
    Packing methodRAIL
    Pricing*$5.86
    CategoryDiscrete Semiconductor Products
    FamilyMOSFETs, GaNFETs - Single
    FET TypeMOSFET N-Channel, Metal Oxide
    SeriesUltraFET™
    Mounting TypeThrough Hole
    Package / CaseTO-220-3 (Straight Leads)
    Power - Max345W
    FET FeatureLogic Level Gate
    Rds On (Max) @ Id, Vgs2.5 mOhm @ 75A, 10V
    Drain to Source Voltage (Vdss)30V
    Vgs(th) (Max) @ Id3V @ 250µA
    Current - Continuous Drain (Id) @ 25° C75A
    Input Capacitance (Ciss) @ Vds 11000pF @ 15V
    Gate Charge (Qg) @ Vgs300nC @ 10V
    Select parameters and click to see components with these parameters.

     
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    Keywords
    ISL9N302AP3 Data Sheet ISL9N302AP3 Spec ISL9N302AP3 Application Notes ISL9N302AP3 Distributor
    ISL9N302AP3 Circuit ISL9N302AP3 Reference ISL9N302AP3 PDF ISL9N302AP3 RoHS