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ISL9N302AS3ST

ISL9N302AS3ST Description

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ISL9N302AS3ST Description

MOSFET N-CH 30V 75A D2PAK

ISL9N302AS3ST Categories

Transistors
N-Channel MOSFET Transistors
PWM ICs

ISL9N302AS3ST Manufacturer

Fairchild Semiconductor

ISL9N302AS3ST Datasheet (PDF)

ISL9N302AS3ST Datasheet

ISL9N302AS3ST Price & Availability


Check ISL9N302AS3ST Price & Availability at Canics

ISL9N302AS3ST Features

  • Fast switching speed
  • rDS(ON) = 0.0019W (Typ), VGS = 10V
  • rDS(ON) = 0.0027W (Typ), VGS = 4.5V
  • Qg (Typ) = 110nC, VGS = 5V
  • Qgd (Typ) = 31nC
  • CISS (Typ) = 11000pF

ISL9N302AS3ST Description

    This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

    ISL9N302AS3ST Parameters

    Product statusFull production
    Package typeTO-263(D2PAK)
    Leads2
    Packing methodTAPE REEL
    Pricing*$3.60
    CategoryDiscrete Semiconductor Products
    FamilyMOSFETs, GaNFETs - Single
    FET TypeMOSFET N-Channel, Metal Oxide
    SeriesUltraFET™
    Mounting TypeSurface Mount
    Package / CaseD²Pak, TO-263 (2 leads + tab)
    Power - Max345W
    FET FeatureLogic Level Gate
    Rds On (Max) @ Id, Vgs2.3 mOhm @ 75A, 10V
    Drain to Source Voltage (Vdss)30V
    Vgs(th) (Max) @ Id3V @ 250µA
    Current - Continuous Drain (Id) @ 25° C75A
    Input Capacitance (Ciss) @ Vds 11000pF @ 15V
    Gate Charge (Qg) @ Vgs300nC @ 10V
    Select parameters and click to see components with these parameters.

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    Keywords
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    ISL9N302AS3ST Circuit ISL9N302AS3ST Reference ISL9N302AS3ST PDF ISL9N302AS3ST RoHS