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ISL9N306AD3ST

ISL9N306AD3ST Description

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ISL9N306AD3ST Categories

Transistors
N-Channel MOSFET Transistors
PWM ICs

ISL9N306AD3ST Manufacturer

Fairchild Semiconductor

ISL9N306AD3ST Datasheet (PDF)

ISL9N306AD3ST Datasheet

ISL9N306AD3ST Price & Availability


Check ISL9N306AD3ST Price & Availability at Canics

ISL9N306AD3ST Features

  • Fast switching speed
  • rDS(on) = 0.0052W (Type), VGS = 10 V
  • rDS(on) = 0.0085W (Type), VGS = 4.5 V
  • Qg (Typ) = 30nC, VGS = 5V
  • Qg (Typ) = 11nC
  • CISS (Typ) = 3400pF

ISL9N306AD3ST Description

    This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

    ISL9N306AD3ST Parameters

    Product statusFull production
    Package typeTO-252(DPAK)
    Leads3
    Packing methodTAPE REEL
    Pricing*$1.16
    Select parameters and click to see components with these parameters.

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    Keywords
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    ISL9N306AD3ST Circuit ISL9N306AD3ST Reference ISL9N306AD3ST PDF ISL9N306AD3ST RoHS