Catalog Categories Part Numbers Manufacturers Search

ISL9N306AS3ST

ISL9N306AS3ST Description

N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFET

ISL9N306AS3ST Categories

Transistors
N-Channel MOSFET Transistors
PWM ICs

ISL9N306AS3ST Manufacturer

Fairchild Semiconductor

ISL9N306AS3ST Datasheet (PDF)

ISL9N306AS3ST Datasheet

ISL9N306AS3ST Price & Availability


Check ISL9N306AS3ST Price & Availability at Canics

ISL9N306AS3ST Features

  • Fast switching speed
  • rDS(on) = 0.0052W (Type), VGS = 10 V
  • rDS(on) = 0.0085W (Type), VGS = 4.5 V
  • Qg (Typ) = 30nC, VGS = 5V
  • Qg (Typ) = 11nC
  • CISS (Typ) = 3400pF

ISL9N306AS3ST Description

    This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

    ISL9N306AS3ST Parameters

    Product statusFull production
    Package typeTO-263(D2PAK)
    Leads2
    Packing methodTAPE REEL
    Pricing*$1.38
    Select parameters and click to see components with these parameters.

    Products Similar to ISL9N306AS3ST

    ISL9N306AP3, ISL9N306AS3ST_NL

     
    Other Components
    4301.5052
    TNPW0805162KBETA
    MUR440RLG
    DTC614TKT146
    NCP553SQ25T1G
    Keywords
    ISL9N306AS3ST Data Sheet ISL9N306AS3ST Spec ISL9N306AS3ST Application Notes ISL9N306AS3ST Distributor
    ISL9N306AS3ST Circuit ISL9N306AS3ST Reference ISL9N306AS3ST PDF ISL9N306AS3ST RoHS