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ISL9N312AS3ST

ISL9N312AS3ST Description

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ISL9N312AS3ST Categories

Transistors
N-Channel MOSFET Transistors
PWM ICs

ISL9N312AS3ST Manufacturer

Fairchild Semiconductor

ISL9N312AS3ST Datasheet (PDF)

ISL9N312AS3ST Datasheet

ISL9N312AS3ST Price & Availability


Check ISL9N312AS3ST Price & Availability at Canics

ISL9N312AS3ST Features

  • Fast switching speed
  • rDS(ON) = 0.010W (Typ), VGS = 10V
  • rDS(ON) = 0.017W (Typ), VGS = 4.5V
  • Qg (Typ) = 13nC, VGS = 5V
  • Qgd (Typ) = 4.5nC
  • CISS (Typ) = 1450pF

ISL9N312AS3ST Description

    This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

    ISL9N312AS3ST Parameters

    Product statusFull production
    Package typeTO-263(D2PAK)
    Leads2
    Packing methodTAPE REEL
    Pricing*$1.12
    Select parameters and click to see components with these parameters.

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    Keywords
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