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HMC349MS8G

HMC349MS8G Description

HMC349MS8G Categories

HMC349MS8G Manufacturer

HMC349MS8G Datasheet (PDF)

HMC349MS8G Datasheet

HMC349MS8G Price & Availability


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HMC349MS8G Features

• High Isolation: 70 dB @ 1 GHz
    57 dB @ 2 GHz
• Single Positive Control: 0/+5V
• +52 dBm Input IP3
• Non-Reflective Design
• All Off State
• Ultra Small MS8G SMT Package: 14.8 mm²
• Included in the
   HMC-DK005 Designer’s Kit

HMC349MS8G Description

The HMC349MS8G(E) is a high isolation non-reflective DC to 4 GHz GaAs MESFET SPDT switch in low cost 8 lead MSOP8G surface mount package with exposed ground paddles. The switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an “all off” state.

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