HMC349MS8GE | ||||||||
HMC349MS8GE DescriptionHMC349MS8GE CategoriesHMC349MS8GE ManufacturerHMC349MS8GE Datasheet (PDF)HMC349MS8GE Price & AvailabilityHMC349MS8GE Features• High Isolation: 70 dB @ 1 GHz 57 dB @ 2 GHz • Single Positive Control: 0/+5V • +52 dBm Input IP3 • Non-Reflective Design • All Off State • Ultra Small MS8G SMT Package: 14.8 mm² • Included in the HMC-DK005 Designer’s Kit HMC349MS8GE DescriptionThe HMC349MS8G(E) is a high isolation non-reflective DC to 4 GHz GaAs MESFET SPDT switch in low cost 8 lead MSOP8G surface mount package with exposed ground paddles. The switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an “all off” state. Products Similar to HMC349MS8GEOther Components AQMLTR5N00750FC P51-15-A-A-MD-5V AGM10DTAS-S189 EMS22CHC-24.000M 160831-3 Keywords
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