HMC435MS8GE | ||||||||
HMC435MS8GE DescriptionHMC435MS8GE CategoriesHMC435MS8GE ManufacturerHMC435MS8GE Datasheet (PDF)HMC435MS8GE Price & AvailabilityHMC435MS8GE Features• High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz • Positive Control: 0/+5V • 51 dBm Input IP3 • Non-Reflective Design • MS8G SMT Package, 14.8 mm² HMC435MS8GE DescriptionThe HMC435MS8G(E) is a non-reflective DC to 4 GHz GaAs MESFET SPDT switch in low cost 8 lead MSOP8G surface mount package with an exposed ground paddle. The switch is ideal for cellular/3G and WiMAX/4G applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +50 dBm input IP3. Power handling is excellent up through the 3.8 GHz WiMAX band with the switch offering a P1dB compression of +31 dBm. On- chip circuitry allows positive voltage control of 0/+5 Volts at very low DC currents. Products Similar to HMC435MS8GEOther Components TNPW060397K6BETA LSC4335DW LTR50UZPF56R0 C0RRS-4036G-ND TMP441AIDCNT Keywords
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