HMC582LP5E

HMC582LP5E Description

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HMC582LP5E Datasheet (PDF)

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HMC582LP5E Features

• Triple Output:
      Fo= 11.1 - 12.4 GHz
      Fo/2= 5.55 - 6.2 GHz
      Fo/4= 2.78 - 3.1 GHz
• Pout: +9 dBm
• Phase Noise:
      -110 dBc/Hz @ 100 kHz Typical
• No External Resonator Needed
• QFN Leadless SMT Package, 25 mm²

HMC582LP5E Description

The HMC582LP5(E) is a GaAs InGaP Herterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC582LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure.

Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage cont-rolled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.

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