HMC583LP5E

HMC583LP5E Description

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HMC583LP5E Manufacturer

HMC583LP5E Datasheet (PDF)

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HMC583LP5E Features

• Dual Output: Fo = 11.5 - 12.8 GHz
     Fo/2 = 5.75 - 6.4 GHz
• Pout: +11 dBm
• Phase Noise: -110 dBc/Hz @100 kHz Typ.
• No External Resonator Needed
• QFN Leadless SMT Package, 25 mm²

HMC583LP5E Description

The HMC583LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC583LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.

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