HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications

NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities

SUPPLY VOLTAGE
- 3.3V device: VCC = 2.7 to 3.6V : HY27UAXX1G1M
- 1.8V device: VCC = 1.7 to 1.95V : HY27SAXX1G1M
1.8V Operation Product : TBD

Memory Cell Array
- 1056Mbit = 528 Bytes x 32 Pages x 8,192 Blocks

PAGE SIZE
- x8 device: (512 + 16 spare) Bytes: HY27(U/S)A081G1M
- x16 device: (256 + 8 spare) Words: HY27(U/S)A161G1M

BLOCK SIZE
- x8 device: (16K + 512 spare) Bytes: HY27(U/S)A081G1M
- x16 device: (8K + 256 spare) Words: HY27(U/S)A161G1M

PAGE READ / PROGRAM
- Random access: 12us (max)
- Sequential access: 50ns (min)
- Page program time: 200us (typ)

COPY BACK PROGRAM MODE
- Fast page copy without external buffering

FAST BLOCK ERASE
- Block erase time: 2ms (Typ)

STATUS REGISTER

ELECTRONIC SIGNATURE

Sequential Row Read Option

AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support
- Automatic Memory Download

SERIAL NUMBER OPTION

HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions

DATA INTEGRITY
- 100,000 Program/Erase cycles
- 10 years Data Retention

PACKAGE
- HY27(U/S)A(08/16)1G1M-T(P): 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27(U/S)A(08/16)1G1M-T (Lead)
- HY27(U/S)A(08/16)1G1M-TP (Lead Free)
- HY27(U/S)A08121A-V(P): 48-Pin WSOP1 (12 x 17 x 0.7 mm)
- HY27(U/S)A081G1M-V (Lead)
- HY27(U/S)A081G1M-VP (Lead Free)
- HY27(U/S)A(08/16)121M-F(P): 63-Ball FBGA (8.5 x 15 x 1.2 mm)
- HY27(U/S)A(08/16)1G1M-F (Lead)
- HY27(U/S)A(08/16)1G1M-FP (Lead Free)