Download Android Application
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
SUPPLY VOLTAGE
- 3.3V device: VCC = 2.7 to 3.6V : HY27UFXX1G2M
- 1.8V device: VCC = 1.7 to 1.95V : HY27SFXX1G2M
Memory Cell Array
= (2K+ 64) Bytes x 64 Pages x 1,024 Blocks
= (1K+32) Words x 64 pages x 1,024 Blocks
PAGE SIZE
- x8 device : (2K + 64 spare) Bytes: HY27(U/S)F081G2M
- x16 device: (1K + 32 spare) Words: HY27(U/S)F161G2M
BLOCK SIZE
- x8 device:(128K + 4K spare) Bytes
- x16 device: (64K + 2K spare) Words
PAGE READ / PROGRAM
- Random access: 25us (max.)
- Sequential access: 50ns (min.)
- Page program time: 300us (typ.)
COPY BACK PROGRAM MODE
- Fast page copy without external buffering
CACHE PROGRAM MODE
- Internal Cache Register to improve the programthroughput
FAST BLOCK ERASE
- Block erase time: 2ms (Typ.)
STATUS REGISTER
ELECTRONIC SIGNATURE
- Manufacturer Code
- Device Code
CHIP ENABLE DON'T CARE OPTION
- Simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support
- Automatic Memory Download
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions
DATA INTEGRITY
- 100,000 Program/Erase cycles
- 10 years Data Retention
PACKAGE
- HY27(U/S)F(08/16)1G2M-T(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27(U/S)F(08/16)1G2M-T (Lead)
- HY27(U/S)F(08/16)1G2M-TP (Lead Free)
- HY27(U/S)F(08/16)1G2M-V(P)
: 48-Pin WSOP1 (12 x 17 x 0.7 mm)
- HY27(U/S)F(08/16)1G2M-V (Lead)
- HY27(U/S)F(08/16)1G2M-VP (Lead Free)
- HY