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IDT71V3579S80BQ
IDT71V3579S80BQ Description
3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O
IDT71V3579S80BQ Vendor
IDT
IDT71V3579S80BQ Datasheet and Application Notes
ParameterValue
Organization256K x 18
Access Time7.5-8.5 ns
Cycle Time133-150 MHz
OutputFlowthrough
Voltage3.3 V
I/O Voltage3.3V
ArchitectureSynch Burst
Density4 Mb
Speed80 ns
TemperatureC
PackageCABGA 165
StatusNew
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