| ACS03MS Manufacturer | Intersil |
| ACS03MS Description | NAND Gate, Quad 2-Input, Rad-Hard, Advanced Logic, CMOS |
| ACS03MS Description | CMOS Quad 2-Input NAND Gate with Open Drain |
| ACS03MS Categories | |
| ACS03MS Datasheet (PDF) | |
| ACS03MS Features | |
| ACS03MS Features | - Devices QML Qualified in Accordance with MIL-PRF-38535
- Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil?s QM Plan
- 1.25 Micron Radiation Hardened SOS CMOS
- Total Dose >300K RAD (Si)
- Single Event Upset (SEU) Immunity: <1 x 10-10Errors/Bit/Day (Typ)
- SEU LET Threshold >100 MEV-cm2/mg
- Dose Rate Upset >1011RAD (Si)/s, 20ns Pulse
- Dose Rate Survivability >1012RAD (Si)/s, 20ns Pulse
- Latch-Up Free Under Any Conditions
- Military Temperature Range -55oC to +125oC
- Significant Power Reduction Compared to ALSTTL Logic
- DC Operating Voltage Range 4.5V to 5.5V
- Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
- Input Current ? 1?A at VOL, VOH
- Fast Propagation Delay 15ns (Max), 10ns (Typ)
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| ACS03MS Description |
The Intersil ACS03MS is a Radiation Hardened quad 2-input NAND gate with open drain outputs. The open drain output can drive resistive loads from a separate supply voltage.
The ACS03MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of a radiation hardened, high-speed, CMOS/SOS Logic Family.
The ACS03MS is supplied in a 14 lead Ceramic Flatpack (K suffix) or a Ceramic Dual-In-Line Package (D suffix). |