ACS03MS

ACS03MS Manufacturer

ACS03MS Description

ACS03MS Description

ACS03MS Categories

ACS03MS Datasheet (PDF)

ACS03MS Price & Availability

ACS03MS Features

ACS03MS Features

• Devices QML Qualified in Accordance with MIL-PRF-38535
• Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil?s QM Plan
• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose >300K RAD (Si)
• Single Event Upset (SEU) Immunity: <1 x 10^-10Errors/Bit/Day (Typ)
• SEU LET Threshold >100 MEV-cm²/mg
• Dose Rate Upset >10¹¹RAD (Si)/s, 20ns Pulse
• Dose Rate Survivability >10¹²RAD (Si)/s, 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range -55^oC to +125^oC
• Significant Power Reduction Compared to ALSTTL Logic
• DC Operating Voltage Range 4.5V to 5.5V
• Input Logic Levels
  • VIL = 30% of VCC Max
  • VIH = 70% of VCC Min
• Input Current ? 1?A at VOL, VOH
• Fast Propagation Delay 15ns (Max), 10ns (Typ)

ACS03MS Description

The Intersil ACS03MS is a Radiation Hardened quad 2-input NAND gate with open drain outputs. The open drain output can drive resistive loads from a separate supply voltage.

The ACS03MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of a radiation hardened, high-speed, CMOS/SOS Logic Family.

The ACS03MS is supplied in a 14 lead Ceramic Flatpack (K suffix) or a Ceramic Dual-In-Line Package (D suffix).