The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of f_T in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors.

CA3127M Parameters

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CA3127, CA3127MZ, CA3127E, CA3127M96

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Keywords

CA3127M Data Sheet	CA3127M Spec	CA3127M Application Notes	CA3127M Distributor
CA3127M Circuit	CA3127M Reference	CA3127M PDF	CA3127M RoHS