DG411DY

DG411DY Manufacturer

DG411DY Description

DG411DY Description

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DG411DY Datasheet (PDF)

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DG411DY Features

• ON-Resistance (Max) 35Ω
• Low Power Consumption (P_D) <35μW
• Fast Switching Action
  • t_ON (Max) 175ns
  • t_OFF (Max) 145ns
• Low Charge Injection
• Upgrade from DG211, DG212
• TTL, CMOS Compatible
• Single or Split Supply Operation
• Pb-Free Plus Anneal Available (RoHS Compliant)

DG411DY Description

The DG411 series monolithic CMOS analog switches are drop-in replacements for the popular DG211 and DG212 series devices. They include four independent single pole throw (SPST) analog switches, and TTL and CMOS compatible digital inputs.

These switches feature lower analog ON-resistance (<35Ω) and faster switch time (t_ON<175ns) compared to the DG211 or DG212. Charge injection has been reduced, simplifying sample and hold applications.

The improvements in the DG411 series are made possible by using a high voltage silicon-gate process. An epitaxial layer prevents the latch-up associated with older CMOS technologies. The 44V maximum voltage range permits controlling 40V_P-P signals. Power supplies may be single-ended from +5V to 44V, or split from ±5V to ±20V.

The four switches are bilateral, equally matched for AC or bidirectional signals. The ON-resistance variation with analog signals is quite low over a ±15V analog input range. The switches in the DG411 and DG412 are identical, differing only in the polarity of the selection logic. Two of the switches in the DG413 (#2 and #3) use the logic of the DG211 and DG411 (i.e., a logic "0" turns the switch ON) and the other two switches use DG212 and DG412 positive logic. This permits independent control of turn-on and turn-off times for SPDT configurations, permitting "break-before-make" or "makebefore- break" operation with a minimum of external logic.

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