HCS08MS

HCS08MS Manufacturer

HCS08MS Description

HCS08MS Categories

HCS08MS Datasheet (PDF)

HCS08MS Price & Availability

HCS08MS Features

• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD(Si)
• SEP Effective LET No Upsets: >100 MEV-cm²/mg
• Single Event Upset (SEU) Immunity -9Errors/Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10¹²Rads (Si)/s
• Dose Rate Upset >10¹⁰RAD(Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55^oC to +12^oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
  • VIL = 30% of VCC Max
  • VIH = 70% of VCC Min
• Input Current Levels Ii ? 5?A at VOL, VOH