| HCS10MS Description | | NAND-Gate, 3-Input, Triple, Rad-Hard, High-Speed, CMOS, Logic | | HCS10MS Vendor | | Intersil | | HCS10MS Categories | | | HCS10MS Features | - 3 Micron Radiation Hardened SOS CMOS
- Total Dose 200K RAD (Si)
- SEP Effective LET No Upsets: >100 MEV-cm2/mg
- Single Event Upset (SEU) Immunity -9Errors/Bit-Day (Typ)
- Dose Rate Survivability: >1 x 1012RAD (Si)/s
- Dose Rate Upset >1010RAD (SI)/s 20ns Pulse
- Cosmic Ray Upset Immunity -9Errors/Gate Day (Typ)
- Latch-Up Free Under Any Conditions
- Military Temperature Range: -55oC to +125oC
- Significant Power Reduction Compared to LSTTL ICs
- DC Operating Voltage Range: 4.5V to 5.5V
- Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
- Input Current Levels Ii ≤ 5�A at VOL, VOH
| | HCS10MS Datasheet and Application Notes | |
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