HCS11MS Manufacturer
HCS11MS DescriptionHCS11MS DescriptionHCS11MS Categories
HCS11MS Datasheet (PDF)
HCS11MS Price & Availability
HCS11MS FeaturesHCS11MS Features- 3 Micron Radiation Hardened SOS CMOS
- Total Dose 200K or 1 Mega-RAD(Si)
- Dose Rate Upset >1010RAD(Si)/s 20ns Pulse
- Cosmic Ray Upset Immunity -9Errors/Gate Day (Typ)
- Latch-Up Free Under Any Conditions
- Military Temperature Range: -55oC to +125oC
- Significant Power Reduction Compared to LSTTL ICs
- DC Operating Voltage Range: 4.5V to 5.5V
- Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
- Input Current Levels Ii ? 5?A at VOL, VOH
HCS11MS Description
The Intersil HCS11MS is a Radiation Hardened Triple 3- Input AND Gate. A high on all inputs forces the output to a High state.
The HCS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS11MS is supplied in a 14 lead Weld Seal Ceramic flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line Package (D suffix).
Keywords
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HCS11MS Spec |
HCS11MS Application Notes |
HCS11MS Distributor |
| HCS11MS Circuit |
HCS11MS Reference |
HCS11MS PDF |
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