HCS86MS

HCS86MS Manufacturer

HCS86MS Description

HCS86MS Description

HCS86MS Categories

HCS86MS Datasheet (PDF)

HCS86MS Price & Availability

HCS86MS Features

HCS86MS Features

• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm²/mg
• Single Event Upset (SEU) Immunity -9Errors/Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10¹²RAD (Si)/s
• Dose Rate Upset >10¹⁰RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55^oC to +125^oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
  • VIL = 30% of VCC Max
  • VIH = 70% of VCC Min
• Input Current Levels Ii = 5?A at VOL, VOH

HCS86MS Description

The Intersil HCS86MS is a Radiation Hardened Quad 2-Input Exclusive OR Gate. A high on any one input exclusively will change the output to a High state.

The HCS86MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family with either TTL or CMOS input compatibility.

The HCS86MS is supplied in a 14 lead Weld Seal Ceramic flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line Package (D suffix).