HCTS00MS

HCTS00MS Manufacturer

HCTS00MS Description

HCTS00MS Categories

HCTS00MS Datasheet (PDF)

HCTS00MS Price & Availability

HCTS00MS Features

• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm²/mg
• Single Event Upset (SEU) Immunity -9Errors/Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10^{12RAD (Si)/s}
• ^{Dose Rate Upset >1010RAD (Si)/s 20ns Pulse}
• ^{Cosmic Ray Upset Immunity -9Errors/Gate Day (Typ)}
• ^{Latch-Up Free Under Any Conditions}
• ^{Military Temperature Range: -55oC to +125oC}
• ^{Significant Power Reduction Compared to LSTTL ICs}
• ^{DC Operating Voltage Range: 4.5V to 5.5V}
• ^{LSTTL Input Compatibility}
  • ^{VIL = 0.8V Max}
  • ^{VIH = VCC/2 Min}
• ^{CMOS Input Compatibility Ii ? 5?A at VOL, VOH}